Samsung Electronics announced today that it has started production on the world's first high performance DDR2 MLC (Multi-Level Cell) memory chips.
We are first.
The Memory chips will also have support for SATA3 and USB3 interfaces. They also feature a toggle switch which will allow them to transmit data at speeds of up to 400Mbit/s. According to Samsung, besides being faster than current NAND memory, the new chips allow for 50% increase in productivity with a toggle to DDR1 interface.
Samsung has stated that it has managed to reach the 64GB density via the use of ‘Advanced 20nm class process technology’. At the announcement, Wanhoon Hong, EVP of memory sales and marketing at Samsung Electronics said, “With this 20nm-class, 64GB, toggle DDR 2.0 NAND, Samsung is leading the market, which is evolving to fourth-generation smartphones and SATA 6Gbps SSDs. We will continue to aggressively develop the world's most advanced toggle DDR NAND flash solutions with higher performance and density, since we see them as vital to enabling a greater diversity of services for mobile phone users worldwide”.
It is worth noting that Samsung and Toshiba had both set out to develop DDR2 NAND flash memory, but with this news, it is Samsung who has emerged as the first past the finish line.